BC847BFA-7B Datasheet & Equivalents
NPN
DFN-3 (0.8x0.6)
General Purpose
DIODES
VCEO
45V
Ic Max
100mA
Pd Max
435mW
hFE Gain
200
Quick Reference
The BC847BFA-7B is a NPN bipolar junction transistor in a DFN-3 (0.8x0.6) package, manufactured by DIODES. It supports a breakdown voltage of 45V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | DFN-3 (0.8x0.6) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 45V | Max breakdown voltage |
| Collector Current (Ic) | 100mA | Max current handling |
| Power Dissipation (Pd) | 435mW | Max thermal limit |
| DC Current Gain (hFE) | 200 | Base signal amplification ratio |
| Transition Frequency (fT) | 170MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 50mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 15nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BC847BFAQ-7B | NPN | DFN-3 (0.8x0.6) | 45V | 100mA | 470 | 435mW | DIODES 📄 PDF |