BC846BWT1G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNSC-70(SOT-323)General Purpose
VCEO
65V
Ic Max
100mA
Pd Max
200mW
Gain
150

Quick Reference

The BC846BWT1G is a NPN bipolar transistor in a SC-70(SOT-323) package. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the BC846BWT1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSC-70(SOT-323)Physical mounting
VCEO65VBreakdown voltage
IC Max100mACollector current
Pd Max200mWPower dissipation
Gain150DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo100MHzEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
2SC4081T106RNPNSC-70(SOT-323)50V150mA200mW
2SCR523UBTLNPNSC-70(SOT-323)50V100mA200mW
2SC4081U3HZGT106QNPNSC-70(SOT-323)50V150mA200mW
2SC4081UBTLRNPNSC-70(SOT-323)50V150mA200mW