BC33740TA Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNTO-92-3LGeneral Purpose
VCEO
50V
Ic Max
800mA
Pd Max
625mW
Gain
100
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Quick Reference

The BC33740TA is a NPN bipolar transistor in a TO-92-3L package. This datasheet provides complete specifications including 50V breakdown voltage and 800mA continuous collector current. Download the BC33740TA datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-92-3LPhysical mounting
VCEO50VBreakdown voltage
IC Max800mACollector current
Pd Max625mWPower dissipation
Gain100DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo100MHzEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
2N4401TANPNTO-92-3L40V600mA625mW
MPSA05RANPNTO-92-3L60V500mA625mW
PN2222ATFNPNTO-92-3L40V1A625mW
PN2222ABUNPNTO-92-3L40V1A625mW
KSC1815YTANPNTO-92-3L50V150mA400mW
PN2222ATFRNPNTO-92-3L40V1A625mW
BC547BTANPNTO-92-3L45V100mA500mW
BC546ABUNPNTO-92-3L65V100mA500mW
2N4401BUNPNTO-92-3L40V600mA625mW
2N3904TANPNTO-92-3L40V200mA625mW
View all TO-92-3L NPN Transistors ›