ASM65R280E MOSFET Datasheet & Specifications
N-Channel
DFN-8(8x8)
High-Voltage
ANHI
Vds Max
650V
Id Max
15A
Rds(on)
280mΩ@10V
Vgs(th)
4.2V
Quick Reference
The ASM65R280E is an N-Channel MOSFET in a DFN-8(8x8) package, manufactured by ANHI. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 15A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ANHI | Original Manufacturer |
| Package | DFN-8(8x8) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 650V | Max breakdown voltage |
| Continuous Drain Current (Id) | 15A | Max current handling |
| Power Dissipation (Pd) | 126W | Max thermal limit |
| On-Resistance (Rds(on)) | 280mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4.2V | Voltage required to turn on |
| Gate Charge (Qg) | 19.4nC | Switching energy |
| Input Capacitance (Ciss) | 953.8pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| CID18N65D | N-Channel | DFN-8(8x8) | 650V | 17A | 100mΩ@10V | 1.7V | Tokmas 📄 PDF |
| BCL120N160W1 | N-Channel | DFN-8(8x8) | 1.2kV | 22A | 160mΩ | 3.5V | Bestirpower 📄 PDF |