APTM50AM35FTG MOSFET Array Datasheet & Equivalents

N-Channel Array - High-Voltage MICROCHIP
Vds Max
500V
Id Max
99A
Rds(on)
39mΩ@10V
Vgs(th)
5V

Quick Reference

The APTM50AM35FTG is a N-Channel Array in a - package, manufactured by MICROCHIP. Each channel supports a drain-source breakdown voltage of 500V and a continuous drain current of 99A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMICROCHIPOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)500VMax breakdown voltage
Continuous Drain Current (Id)99AMax current handling
Power Dissipation (Pd)781WMax thermal limit
On-Resistance (Rds(on))39mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))5VVoltage required to turn on
Gate Charge (Qg)280nCSwitching energy
Input Capacitance (Ciss)14nFInternal gate capacitance
Output Capacitance (Coss)2.8nFInternal output capacitance
Operating Temp-40℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
APTC60TAM21SCTPAG N-Channel Array - 600V 116A 21mΩ@10V 3.6V
MICROCHIP 📄 PDF