APTM120H140FT1G MOSFET Array Datasheet & Equivalents

N-Channel Array - High-Voltage MICROCHIP
Vds Max
1.2kV
Id Max
8A
Rds(on)
1.68Ω@10V
Vgs(th)
5V

Quick Reference

The APTM120H140FT1G is a N-Channel Array in a - package, manufactured by MICROCHIP. Each channel supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 8A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMICROCHIPOriginal Manufacturer
Package-Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)1.2kVMax breakdown voltage
Continuous Drain Current (Id)8AMax current handling
Power Dissipation (Pd)208WMax thermal limit
On-Resistance (Rds(on))1.68Ω@10VResistance when turned fully on
Gate Threshold (Vgs(th))5VVoltage required to turn on
Gate Charge (Qg)145nC@10VSwitching energy
Input Capacitance (Ciss)3.812nFInternal gate capacitance
Output Capacitance (Coss)350pFInternal output capacitance
Operating Temp-40℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CBB032M12FM3 N-Channel Array - 1.2kV 41A 44mΩ@15V 3.9V
Wolfspeed 📄 PDF
APTM120DU15G N-Channel Array - 1.2kV 60A 175mΩ@10V 5V
MICROCHIP 📄 PDF