APTM100A23STG MOSFET Array Datasheet & Equivalents
N-Channel Array
-
High-Voltage
MICROCHIP
Vds Max
1kV
Id Max
36A
Rds(on)
270mΩ@10V
Vgs(th)
5V
Quick Reference
The APTM100A23STG is a N-Channel Array in a - package, manufactured by MICROCHIP. Each channel supports a drain-source breakdown voltage of 1kV and a continuous drain current of 36A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MICROCHIP | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 1kV | Max breakdown voltage |
| Continuous Drain Current (Id) | 36A | Max current handling |
| Power Dissipation (Pd) | 694W | Max thermal limit |
| On-Resistance (Rds(on)) | 270mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 5V | Voltage required to turn on |
| Gate Charge (Qg) | 308nC@10V | Switching energy |
| Input Capacitance (Ciss) | 8.7nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.43nF | Internal output capacitance |
| Operating Temp | -40℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| APTM100A13SG | N-Channel Array | - | 1kV | 65A | 156mΩ@10V | 5V | MICROCHIP 📄 PDF |
| CBB032M12FM3 | N-Channel Array | - | 1.2kV | 41A | 44mΩ@15V | 3.9V | Wolfspeed 📄 PDF |
| APTM120DU15G | N-Channel Array | - | 1.2kV | 60A | 175mΩ@10V | 5V | MICROCHIP 📄 PDF |