AP4509AGM MOSFET Datasheet & Specifications
P-Channel
-
Logic-Level
APEC
Vds Max
30V
Id Max
11.2A;8A
Rds(on)
-
Vgs(th)
1V;3V
Quick Reference
The AP4509AGM is an P-Channel MOSFET in a nan package, manufactured by APEC. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 11.2A;8A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | APEC | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 11.2A;8A | Max current handling |
| Power Dissipation (Pd) | 2W | Max thermal limit |
| On-Resistance (Rds(on)) | - | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V;3V | Voltage required to turn on |
| Gate Charge (Qg) | 12nC;15nC | Switching energy |
| Input Capacitance (Ciss) | 715pF;1.26nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||