AP3C023AMT MOSFET Datasheet & Specifications
P-Channel
PMPAK-5x6
Logic-Level
APEC
Vds Max
30V
Id Max
12A;10A
Rds(on)
10.4mΩ@10V;23.5mΩ@10V
Vgs(th)
3V;2.5V
Quick Reference
The AP3C023AMT is an P-Channel MOSFET in a PMPAK-5x6 package, manufactured by APEC. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 12A;10A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | APEC | Original Manufacturer |
| Package | PMPAK-5x6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 12A;10A | Max current handling |
| Power Dissipation (Pd) | 3.57W | Max thermal limit |
| On-Resistance (Rds(on)) | 10.4mΩ@10V;23.5mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V;2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 12nC;13.5nC | Switching energy |
| Input Capacitance (Ciss) | 1.45nF;1.55nF | Internal gate capacitance |
| Output Capacitance (Coss) | 220pF;235pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||