AONR36368-MS MOSFET Datasheet & Specifications

N-Channel DFN3x3-8L Logic-Level MSKSEMI
Vds Max
30V
Id Max
60A
Rds(on)
10mΩ@4.5V
Vgs(th)
2.5V

Quick Reference

The AONR36368-MS is an N-Channel MOSFET in a DFN3x3-8L package, manufactured by MSKSEMI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 60A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageDFN3x3-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)60AMax current handling
Power Dissipation (Pd)59WMax thermal limit
On-Resistance (Rds(on))10mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)20nC@4.5VSwitching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)267pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
AON7422E-MS N-Channel DFN3x3-8L 30V 80A 6mΩ@10V 2.5V
MSKSEMI 📄 PDF
AON7400A-HXY N-Channel DFN3x3-8L 30V 60A 8mΩ@10V 2.5V
HXY MOSFET 📄 PDF