AONR21357-ES MOSFET Datasheet & Specifications
P-Channel
PDFN3x3-8L
Logic-Level
ElecSuper
Vds Max
30V
Id Max
50A
Rds(on)
5.8mΩ@10V;8mΩ@4.5V
Vgs(th)
1V;2.5V
Quick Reference
The AONR21357-ES is an P-Channel MOSFET in a PDFN3x3-8L package, manufactured by ElecSuper. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 50A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ElecSuper | Original Manufacturer |
| Package | PDFN3x3-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 50A | Max current handling |
| Power Dissipation (Pd) | 69W | Max thermal limit |
| On-Resistance (Rds(on)) | 5.8mΩ@10V;8mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V;2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 35nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.522nF | Internal gate capacitance |
| Output Capacitance (Coss) | 465pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |