AOD413A MOSFET Datasheet & Specifications

P-Channel DPAK Logic-Level AOS
Vds Max
40V
Id Max
12A
Rds(on)
66mΩ@4.5V
Vgs(th)
3V

Quick Reference

The AOD413A is an P-Channel MOSFET in a DPAK package, manufactured by AOS. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 12A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerAOSOriginal Manufacturer
PackageDPAKPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)12AMax current handling
Power Dissipation (Pd)50WMax thermal limit
On-Resistance (Rds(on))66mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)21nC@10VSwitching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
TJ80S04M3L(T6L1 P-Channel DPAK 40V 80A 5.2mΩ@10V 3V
TOSHIBA 📄 PDF
NQ P-Channel DPAK 60V 15.5A 150mΩ@5V 2V
onsemi 📄 PDF