AO6601 MOSFET Datasheet & Specifications
P-Channel
SOT-23-6
Logic-Level
UMW
Vds Max
30V
Id Max
3.4A;2.3A
Rds(on)
46mΩ@10V;88mΩ@10V
Vgs(th)
1V
Quick Reference
The AO6601 is an P-Channel MOSFET in a SOT-23-6 package, manufactured by UMW. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 3.4A;2.3A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UMW | Original Manufacturer |
| Package | SOT-23-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 3.4A;2.3A | Max current handling |
| Power Dissipation (Pd) | 1.15W | Max thermal limit |
| On-Resistance (Rds(on)) | 46mΩ@10V;88mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 10nC@10V;5.9nC@10V | Switching energy |
| Input Capacitance (Ciss) | 235pF;260pF | Internal gate capacitance |
| Output Capacitance (Coss) | 35pF;37pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |