AO6601 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
TSOP-6-1.5mm
Logic-Level
AOS
Vds Max
30V
Id Max
20A
Rds(on)
60mΩ@10V
Vgs(th)
1.5V
Quick Reference
The AO6601 is a Dual N/P-Channel in a TSOP-6-1.5mm package, manufactured by AOS. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 20A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | AOS | Original Manufacturer |
| Package | TSOP-6-1.5mm | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 20A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 60mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 12nC@10V | Switching energy |
| Input Capacitance (Ciss) | 285pF | Internal gate capacitance |
| Output Capacitance (Coss) | 45pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||