AO4812-VB MOSFET Datasheet & Specifications
N-Channel
SO-8
Logic-Level
VBsemi Elec
Vds Max
30V
Id Max
6.8A
Rds(on)
22mΩ@10V;26mΩ@4.5V
Vgs(th)
1V;2.5V
Quick Reference
The AO4812-VB is an N-Channel MOSFET in a SO-8 package, manufactured by VBsemi Elec. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 6.8A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VBsemi Elec | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 6.8A | Max current handling |
| Power Dissipation (Pd) | 2.7W | Max thermal limit |
| On-Resistance (Rds(on)) | 22mΩ@10V;26mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V;2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 15nC@10V | Switching energy |
| Input Capacitance (Ciss) | 586pF | Internal gate capacitance |
| Output Capacitance (Coss) | 117pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| APM4828KC-TRL-VB | N-Channel | SO-8 | 30V | 13A | 8mΩ@10V 11mΩ@4.5V |
1V | VBsemi Elec 📄 PDF |
| FDS3672-NL-VB | N-Channel | SO-8 | 100V | 9A | 32mΩ@10V | 1V | VBsemi Elec 📄 PDF |
| IRF7473TRPBF-VB | N-Channel | SO-8 | 100V | 9A | 32mΩ@10V | 1V | VBsemi Elec 📄 PDF |