AO4612 MOSFET Datasheet & Specifications
P-Channel
SOIC-8
Logic-Level
JSMSEMI
Vds Max
60V
Id Max
5A;3.8A
Rds(on)
56mΩ@10V;75mΩ@10V
Vgs(th)
1.3V
Quick Reference
The AO4612 is an P-Channel MOSFET in a SOIC-8 package, manufactured by JSMSEMI. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 5A;3.8A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | SOIC-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 5A;3.8A | Max current handling |
| Power Dissipation (Pd) | 2W | Max thermal limit |
| On-Resistance (Rds(on)) | 56mΩ@10V;75mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.3V | Voltage required to turn on |
| Gate Charge (Qg) | 8.5nC@10V;16nC@10V | Switching energy |
| Input Capacitance (Ciss) | 450pF;930pF | Internal gate capacitance |
| Output Capacitance (Coss) | 60pF;85pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||