AO4606 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SOIC-8
Logic-Level
AOS
Vds Max
30V
Id Max
6.5A
Rds(on)
44mΩ@4.5V
Vgs(th)
1.3V
Quick Reference
The AO4606 is a Dual N/P-Channel in a SOIC-8 package, manufactured by AOS. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 6.5A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | AOS | Original Manufacturer |
| Package | SOIC-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 6.5A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 44mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.3V | Voltage required to turn on |
| Gate Charge (Qg) | 16nC@10V | Switching energy |
| Input Capacitance (Ciss) | 760pF | Internal gate capacitance |
| Output Capacitance (Coss) | 45pF;140pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |