AO4407A MOSFET Datasheet & Specifications (AOS, SOIC-8)
P-Channel
SOIC-8
Logic-Level
AOS
Vds Max
30V
Id Max
12A
Rds(on)
38mΩ@5V
Vgs(th)
3V
Quick Reference
The AO4407A is an P-Channel MOSFET in a SOIC-8 package, manufactured by AOS. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 12A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | AOS | Original Manufacturer |
| Package | SOIC-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 12A | Max current handling |
| Power Dissipation (Pd) | 3.1W | Max thermal limit |
| On-Resistance (Rds(on)) | 38mΩ@5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 39nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.6nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SQ4425EY-T1_GE3 | P-Channel | SOIC-8 | 30V | 18A | 12mΩ@4.5V | 2.5V | VISHAY 📄 PDF |