ZXTP717MATA Transistor Datasheet & Specifications
PNP
DFN-3(2x2)
High Power
DIODES
VCEO
12V
Ic Max
4A
Pd Max
12W
hFE Gain
180
Quick Reference
The ZXTP717MATA is a PNP bipolar transistor in a DFN-3(2x2) package by DIODES. This datasheet provides complete specifications including 12V breakdown voltage and 4A continuous collector current. Download the ZXTP717MATA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | DFN-3(2x2) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 12V | Breakdown voltage |
| Ic | 4A | Collector current |
| Pd | 12W | Power dissipation |
| DC Current Gain | 180 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 140mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |