ZXTNS618MCTA Transistor Datasheet & Specifications

NPN DFN-8-EP(2x3) High Power DIODES
VCEO
20V
Ic Max
4.5A
Pd Max
19.6W
hFE Gain
450
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Quick Reference

The ZXTNS618MCTA is a NPN bipolar transistor in a DFN-8-EP(2x3) package by DIODES. This datasheet provides complete specifications including 20V breakdown voltage and 4.5A continuous collector current. Download the ZXTNS618MCTA datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageDFN-8-EP(2x3)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO20VBreakdown voltage
Ic4.5ACollector current
Pd19.6WPower dissipation
DC Current Gain450hFE / Beta
Frequency140MHzTransition speed (fT)
VCEsat150mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all DFN-8-EP(2x3) NPN Transistors ›