ZXTN619MATA Transistor Datasheet & Specifications

NPN DFN-3(2x2) High Power DIODES
VCEO
50V
Ic Max
4A
Pd Max
19.6W
hFE Gain
200
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Quick Reference

The ZXTN619MATA is a NPN bipolar transistor in a DFN-3(2x2) package by DIODES. This datasheet provides complete specifications including 50V breakdown voltage and 4A continuous collector current. Download the ZXTN619MATA datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageDFN-3(2x2)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic4ACollector current
Pd19.6WPower dissipation
DC Current Gain200hFE / Beta
Frequency165MHzTransition speed (fT)
VCEsat145mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
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