ZXTN4004KQTC Transistor Datasheet & Specifications

NPN TO-252 High Power DIODES
VCEO
150V
Ic Max
1A
Pd Max
3.8W
hFE Gain
100

Quick Reference

The ZXTN4004KQTC is a NPN bipolar transistor in a TO-252 package by DIODES. This datasheet provides complete specifications including 150V breakdown voltage and 1A continuous collector current. Download the ZXTN4004KQTC datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO150VBreakdown voltage
Ic1ACollector current
Pd3.8WPower dissipation
DC Current Gain100hFE / Beta
Frequency-Transition speed (fT)
VCEsat250mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
13003 NPN TO-252 420V 1A 1.2W
2SD669AD-C NPN TO-252 160V 1.5A 10W
BU406D NPN TO-252 150V 7A 65W
BTC1510F3L-TN3-R NPN TO-252 150V 10A 1.1W