ZXT10P40DE6TA Transistor Datasheet & Specifications
PNP
SOT-26
High Power
DIODES
VCEO
40V
Ic Max
2A
Pd Max
8.8W
hFE Gain
180
Quick Reference
The ZXT10P40DE6TA is a PNP bipolar transistor in a SOT-26 package by DIODES. This datasheet provides complete specifications including 40V breakdown voltage and 2A continuous collector current. Download the ZXT10P40DE6TA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-26 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 8.8W | Power dissipation |
| DC Current Gain | 180 | hFE / Beta |
| Frequency | 150MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |