ZXT10N50DE6TA Transistor Datasheet & Specifications
NPN
SOT-26
General Purpose
DIODES
VCEO
50V
Ic Max
3A
Pd Max
1.1W
hFE Gain
200
Quick Reference
The ZXT10N50DE6TA is a NPN bipolar transistor in a SOT-26 package by DIODES. This datasheet provides complete specifications including 50V breakdown voltage and 3A continuous collector current. Download the ZXT10N50DE6TA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-26 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 1.1W | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 165MHz | Transition speed (fT) |
| VCEsat | 200mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |