ZXT1053AKQTC Transistor Datasheet & Specifications
NPN
TO-252-2
High Power
DIODES
VCEO
75V
Ic Max
5A
Pd Max
2.1W
hFE Gain
300
Quick Reference
The ZXT1053AKQTC is a NPN bipolar transistor in a TO-252-2 package by DIODES. This datasheet provides complete specifications including 75V breakdown voltage and 5A continuous collector current. Download the ZXT1053AKQTC datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TO-252-2 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 75V | Breakdown voltage |
| Ic | 5A | Collector current |
| Pd | 2.1W | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 140MHz | Transition speed (fT) |
| VCEsat | 350mV | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 10nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |