ZTX849 Transistor Datasheet & Specifications
NPN
TO-92
General Purpose
DIODES
VCEO
30V
Ic Max
5A
Pd Max
1.58W
hFE Gain
300
Quick Reference
The ZTX849 is a NPN bipolar transistor in a TO-92 package by DIODES. This datasheet provides complete specifications including 30V breakdown voltage and 5A continuous collector current. Download the ZTX849 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 30V | Breakdown voltage |
| Ic | 5A | Collector current |
| Pd | 1.58W | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+200℃ | Operating temp |