ZTX558STZ Transistor Datasheet & Specifications
PNP
TO-92
General Purpose
DIODES
VCEO
400V
Ic Max
200mA
Pd Max
1W
hFE Gain
100
Quick Reference
The ZTX558STZ is a PNP bipolar transistor in a TO-92 package by DIODES. This datasheet provides complete specifications including 400V breakdown voltage and 200mA continuous collector current. Download the ZTX558STZ datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 400V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 50MHz | Transition speed (fT) |
| VCEsat | 200mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+200℃ | Operating temp |