ZTX415 Transistor Datasheet & Specifications
NPN
E-Line
General Purpose
DIODES
VCEO
100V
Ic Max
500mA
Pd Max
680mW
hFE Gain
25
Quick Reference
The ZTX415 is a NPN bipolar transistor in a E-Line package by DIODES. This datasheet provides complete specifications including 100V breakdown voltage and 500mA continuous collector current. Download the ZTX415 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | E-Line | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 680mW | Power dissipation |
| DC Current Gain | 25 | hFE / Beta |
| Frequency | 40MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |