UMC4N Transistor Datasheet & Specifications
NPN+PNP
SOT-353
General Purpose
JSCJ
VCEO
-
Ic Max
100mA
Pd Max
150mW
hFE Gain
1
Quick Reference
The UMC4N is a NPN+PNP bipolar transistor in a SOT-353 package by JSCJ. This datasheet provides complete specifications including - breakdown voltage and 100mA continuous collector current. Download the UMC4N datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | SOT-353 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | - | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 150mW | Power dissipation |
| DC Current Gain | 1 | hFE / Beta |
| Frequency | 250MHz | Transition speed (fT) |
| VCEsat | 300mV@10mA,0.5mA | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 61.1kΩ | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |