TTA008B,Q Transistor Datasheet & Specifications

PNP TO-126N General Purpose TOSHIBA
VCEO
80V
Ic Max
2A
Pd Max
1.5W
hFE Gain
100
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Quick Reference

The TTA008B,Q is a PNP bipolar transistor in a TO-126N package by TOSHIBA. This datasheet provides complete specifications including 80V breakdown voltage and 2A continuous collector current. Download the TTA008B,Q datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageTO-126NPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic2ACollector current
Pd1.5WPower dissipation
DC Current Gain100hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all TO-126N PNP Transistors ›