TTA006B,Q Transistor Datasheet & Specifications
PNP
TO-126N
General Purpose
TOSHIBA
VCEO
230V
Ic Max
1A
Pd Max
1.5W
hFE Gain
320
Quick Reference
The TTA006B,Q is a PNP bipolar transistor in a TO-126N package by TOSHIBA. This datasheet provides complete specifications including 230V breakdown voltage and 1A continuous collector current. Download the TTA006B,Q datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TO-126N | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 230V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 1.5W | Power dissipation |
| DC Current Gain | 320 | hFE / Beta |
| Frequency | 70MHz | Transition speed (fT) |
| VCEsat | 1.5V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 200nA | Leakage (ICBO) |
| Temp | - | Operating temp |