TIP35CG Transistor Datasheet & Specifications
NPN
TO-218-3
High Power
onsemi
VCEO
100V
Ic Max
25A
Pd Max
125W
hFE Gain
75
Quick Reference
The TIP35CG is a NPN bipolar transistor in a TO-218-3 package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 25A continuous collector current. Download the TIP35CG datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-218-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 25A | Collector current |
| Pd | 125W | Power dissipation |
| DC Current Gain | 75 | hFE / Beta |
| Frequency | 3MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |