TIP35C Transistor Datasheet & Specifications
NPN
TO-3PNT
High Power
OSEN
VCEO
120V
Ic Max
11A
Pd Max
125W
hFE Gain
160
Quick Reference
The TIP35C is a NPN bipolar transistor in a TO-3PNT package by OSEN. This datasheet provides complete specifications including 120V breakdown voltage and 11A continuous collector current. Download the TIP35C datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | OSEN | Original Manufacturer |
| Package | TO-3PNT | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 120V | Breakdown voltage |
| Ic | 11A | Collector current |
| Pd | 125W | Power dissipation |
| DC Current Gain | 160 | hFE / Beta |
| Frequency | 10MHz | Transition speed (fT) |
| VCEsat | 1.5V | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| OSC5198 | NPN | TO-3PNT | 120V | 11A | 120W |