SS8550W Transistor Datasheet & Specifications
PNP
SOT-323
General Purpose
TWGMC
VCEO
25V
Ic Max
1.5A
Pd Max
200mW
hFE Gain
120
Quick Reference
The SS8550W is a PNP bipolar transistor in a SOT-323 package by TWGMC. This datasheet provides complete specifications including 25V breakdown voltage and 1.5A continuous collector current. Download the SS8550W datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TWGMC | Original Manufacturer |
| Package | SOT-323 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 25V | Breakdown voltage |
| Ic | 1.5A | Collector current |
| Pd | 200mW | Power dissipation |
| DC Current Gain | 120 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| SS8550W | PNP | SOT-323 | 25V | 1.5A | 200mW |
| SS8550(RANGE:200-350) | PNP | SOT-323 | 25V | 1.5A | 200mW |