SNSS30201MR6T1G Transistor Datasheet & Specifications
NPN
TSOP-6
General Purpose
onsemi
VCEO
30V
Ic Max
2A
Pd Max
1.18W
hFE Gain
300
Quick Reference
The SNSS30201MR6T1G is a NPN bipolar transistor in a TSOP-6 package by onsemi. This datasheet provides complete specifications including 30V breakdown voltage and 2A continuous collector current. Download the SNSS30201MR6T1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TSOP-6 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 30V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 1.18W | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| NST489AMT1G | NPN | TSOP-6 | 30V | 3A | 1.18W |