S-LBC817-25DMT1G Transistor Datasheet & Specifications
NPN
SOT-23-6
General Purpose
LRC
VCEO
45V
Ic Max
500mA
Pd Max
370mW
hFE Gain
160
Quick Reference
The S-LBC817-25DMT1G is a NPN bipolar transistor in a SOT-23-6 package by LRC. This datasheet provides complete specifications including 45V breakdown voltage and 500mA continuous collector current. Download the S-LBC817-25DMT1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | LRC | Original Manufacturer |
| Package | SOT-23-6 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 45V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 370mW | Power dissipation |
| DC Current Gain | 160 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |