RN4605(TE85L,F) Transistor Datasheet & Specifications
NPN+PNP
SOT-26
General Purpose
TOSHIBA
VCEO
50V
Ic Max
100mA
Pd Max
300mW
hFE Gain
0.051
Quick Reference
The RN4605(TE85L,F) is a NPN+PNP bipolar transistor in a SOT-26 package by TOSHIBA. This datasheet provides complete specifications including 50V breakdown voltage and 100mA continuous collector current. Download the RN4605(TE85L,F) datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | SOT-26 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 50V | Breakdown voltage |
| Ic | 100mA | Collector current |
| Pd | 300mW | Power dissipation |
| DC Current Gain | 0.051 | hFE / Beta |
| Frequency | 200MHz;250MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 2.86kΩ | Leakage (ICBO) |
| Temp | - | Operating temp |