PMBTA45,215 Transistor Datasheet & Specifications
NPN
SOT-23
General Purpose
Nexperia
VCEO
500V
Ic Max
150mA
Pd Max
300mW
hFE Gain
50
Quick Reference
The PMBTA45,215 is a NPN bipolar transistor in a SOT-23 package by Nexperia. This datasheet provides complete specifications including 500V breakdown voltage and 150mA continuous collector current. Download the PMBTA45,215 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 500V | Breakdown voltage |
| Ic | 150mA | Collector current |
| Pd | 300mW | Power dissipation |
| DC Current Gain | 50 | hFE / Beta |
| Frequency | 35MHz | Transition speed (fT) |
| VCEsat | 90mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |