PMBT3904QAZ Transistor Datasheet & Specifications
NPN
DFN1010-3
General Purpose
Nexperia
VCEO
40V
Ic Max
200mA
Pd Max
440mW
hFE Gain
100
Quick Reference
The PMBT3904QAZ is a NPN bipolar transistor in a DFN1010-3 package by Nexperia. This datasheet provides complete specifications including 40V breakdown voltage and 200mA continuous collector current. Download the PMBT3904QAZ datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | DFN1010-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 40V | Breakdown voltage |
| Ic | 200mA | Collector current |
| Pd | 440mW | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 300MHz | Transition speed (fT) |
| VCEsat | 120mV | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | - | Operating temp |