PHPT61010NYX Transistor Datasheet & Specifications
NPN
SOT-669
General Purpose
Nexperia
VCEO
100V
Ic Max
10A
Pd Max
1.5W
hFE Gain
150
Quick Reference
The PHPT61010NYX is a NPN bipolar transistor in a SOT-669 package by Nexperia. This datasheet provides complete specifications including 100V breakdown voltage and 10A continuous collector current. Download the PHPT61010NYX datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-669 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 10A | Collector current |
| Pd | 1.5W | Power dissipation |
| DC Current Gain | 150 | hFE / Beta |
| Frequency | 145MHz | Transition speed (fT) |
| VCEsat | 250mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55℃~+175℃ | Operating temp |