PBSS5630PA,115 Transistor Datasheet & Specifications
PNP
SOT-1061
High Power
Nexperia
VCEO
30V
Ic Max
6A
Pd Max
1.4W
hFE Gain
230
Quick Reference
The PBSS5630PA,115 is a PNP bipolar transistor in a SOT-1061 package by Nexperia. This datasheet provides complete specifications including 30V breakdown voltage and 6A continuous collector current. Download the PBSS5630PA,115 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-1061 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 30V | Breakdown voltage |
| Ic | 6A | Collector current |
| Pd | 1.4W | Power dissipation |
| DC Current Gain | 230 | hFE / Beta |
| Frequency | 80MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |