PBSS5160QAZ Transistor Datasheet & Specifications
PNP
DFN1010D-3
General Purpose
Nexperia
VCEO
60V
Ic Max
1A
Pd Max
1W
hFE Gain
160
Quick Reference
The PBSS5160QAZ is a PNP bipolar transistor in a DFN1010D-3 package by Nexperia. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the PBSS5160QAZ datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | DFN1010D-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 1A | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 160 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 225mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |