PBSS5130T,215 Transistor Datasheet & Specifications

PNP SOT-23 General Purpose Nexperia
VCEO
30V
Ic Max
1A
Pd Max
480mW
hFE Gain
260

Quick Reference

The PBSS5130T,215 is a PNP bipolar transistor in a SOT-23 package by Nexperia. This datasheet provides complete specifications including 30V breakdown voltage and 1A continuous collector current. Download the PBSS5130T,215 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic1ACollector current
Pd480mWPower dissipation
DC Current Gain260hFE / Beta
Frequency200MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
LBSS5240LT1G PNP SOT-23 40V 2A 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
FMMT591ATA PNP SOT-23 40V 1A 500mW
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
FMMT591TA PNP SOT-23 60V 1A 500mW
DSS5240TQ-7 PNP SOT-23 40V 2A 730mW
FMMT591 PNP SOT-23 60V 1A 500mW
PBSS5140T,215 PNP SOT-23 40V 1A 450mW
FMMT720QTA PNP SOT-23 40V 1.5A 806mW