PBSS5120T-HXY Transistor Datasheet & Specifications

PNP SOT-23 General Purpose HXY MOSFET
VCEO
30V
Ic Max
1A
Pd Max
310mW
hFE Gain
300

Quick Reference

The PBSS5120T-HXY is a PNP bipolar transistor in a SOT-23 package by HXY MOSFET. This datasheet provides complete specifications including 30V breakdown voltage and 1A continuous collector current. Download the PBSS5120T-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic1ACollector current
Pd310mWPower dissipation
DC Current Gain300hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat650mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
LBSS5240LT1G PNP SOT-23 40V 2A 300mW
ZXTP2025FTA PNP SOT-23 50V 5A 1.2W
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
FMMT591ATA PNP SOT-23 40V 1A 500mW
PBSS5160T,215 PNP SOT-23 60V 1A 400mW
FMMT591TA PNP SOT-23 60V 1A 500mW
DSS5240TQ-7 PNP SOT-23 40V 2A 730mW
FMMT591 PNP SOT-23 60V 1A 500mW
PBSS5140T,215 PNP SOT-23 40V 1A 450mW
FMMT720QTA PNP SOT-23 40V 1.5A 806mW