PBSS4420D,115 Transistor Datasheet & Specifications
NPN
SOT-457
General Purpose
Nexperia
VCEO
20V
Ic Max
4A
Pd Max
1.1W
hFE Gain
250
Quick Reference
The PBSS4420D,115 is a NPN bipolar transistor in a SOT-457 package by Nexperia. This datasheet provides complete specifications including 20V breakdown voltage and 4A continuous collector current. Download the PBSS4420D,115 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-457 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 20V | Breakdown voltage |
| Ic | 4A | Collector current |
| Pd | 1.1W | Power dissipation |
| DC Current Gain | 250 | hFE / Beta |
| Frequency | 100MHz | Transition speed (fT) |
| VCEsat | 300mV | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | - | Operating temp |