PBSS305PD,115 Transistor Datasheet & Specifications
PNP
SOT-457
General Purpose
Nexperia
VCEO
100V
Ic Max
2A
Pd Max
1.1W
hFE Gain
75
Quick Reference
The PBSS305PD,115 is a PNP bipolar transistor in a SOT-457 package by Nexperia. This datasheet provides complete specifications including 100V breakdown voltage and 2A continuous collector current. Download the PBSS305PD,115 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-457 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 1.1W | Power dissipation |
| DC Current Gain | 75 | hFE / Beta |
| Frequency | 110MHz | Transition speed (fT) |
| VCEsat | 250mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -65โ~+150โ | Operating temp |