PBSS2515M,315 Transistor Datasheet & Specifications
NPN
SOT-883
General Purpose
Nexperia
VCEO
15V
Ic Max
500mA
Pd Max
430mW
hFE Gain
90
Quick Reference
The PBSS2515M,315 is a NPN bipolar transistor in a SOT-883 package by Nexperia. This datasheet provides complete specifications including 15V breakdown voltage and 500mA continuous collector current. Download the PBSS2515M,315 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-883 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 15V | Breakdown voltage |
| Ic | 500mA | Collector current |
| Pd | 430mW | Power dissipation |
| DC Current Gain | 90 | hFE / Beta |
| Frequency | 420MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 50uA | Leakage (ICBO) |
| Temp | -65โ~+150โ | Operating temp |