OSB688 Transistor Datasheet & Specifications
NPN+PNP
TO-3PNT
High Power
OSEN
VCEO
120V
Ic Max
10A
Pd Max
100W
hFE Gain
160
Quick Reference
The OSB688 is a NPN+PNP bipolar transistor in a TO-3PNT package by OSEN. This datasheet provides complete specifications including 120V breakdown voltage and 10A continuous collector current. Download the OSB688 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | OSEN | Original Manufacturer |
| Package | TO-3PNT | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 120V | Breakdown voltage |
| Ic | 10A | Collector current |
| Pd | 100W | Power dissipation |
| DC Current Gain | 160 | hFE / Beta |
| Frequency | 10MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | - | Operating temp |