NZT660A Transistor Datasheet & Specifications
PNP
SOT-223-4L
General Purpose
onsemi
VCEO
60V
Ic Max
3A
Pd Max
2W
hFE Gain
250
Quick Reference
The NZT660A is a PNP bipolar transistor in a SOT-223-4L package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 3A continuous collector current. Download the NZT660A datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-223-4L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 2W | Power dissipation |
| DC Current Gain | 250 | hFE / Beta |
| Frequency | 75MHz | Transition speed (fT) |
| VCEsat | 500mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |