NSVMMBT2907AWT1G Transistor Datasheet & Specifications
PNP
SC-70-3
General Purpose
onsemi
VCEO
60V
Ic Max
600mA
Pd Max
150mW
hFE Gain
75
Quick Reference
The NSVMMBT2907AWT1G is a PNP bipolar transistor in a SC-70-3 package by onsemi. This datasheet provides complete specifications including 60V breakdown voltage and 600mA continuous collector current. Download the NSVMMBT2907AWT1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SC-70-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 600mA | Collector current |
| Pd | 150mW | Power dissipation |
| DC Current Gain | 75 | hFE / Beta |
| Frequency | 200MHz | Transition speed (fT) |
| VCEsat | 400mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 50nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |